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In addition to enhancing the heat dissipation performance from the system perspective, with the popularization of LED lighting applications, the requirements for heat-dissipating substrates are becoming more and more stringent. The development of LED substrate materials and technologies has also progressed in recent years. The latest trend is for silicon-based GaN. Development of (GaN-on-Silicon). Basically, due to the technical bottleneck of sapphire substrates, LED manufacturers are actively looking for new substrate materials, and silicon-based gallium nitride can reduce the coefficient of thermal expansion difference, which not only enhances the luminous intensity of LEDs, but also significantly reduces manufacturing costs and improves heat dissipation performance. Therefore, it has become a new technology that the industry is competing for development.
For example, Bridgelux and Toshiba have jointly developed a silicon-based gallium nitride white LED, which was mass-produced at an 8-inch wafer fab in Kaga, Japan last October. Toshiba and Purui Optoelectronics have cooperated since January 2012, combined with Puri's crystal growth and LED chip structure, and Toshiba's advanced silicon manufacturing process. Both parties have successfully developed LED chips with a maximum light output of 614 mW. Only 1.1 square millimeters, the maximum light output is 614 milliwatts. MakotoHideshima, vice president of Toshiba Corporation and executive vice president of semiconductor and storage products, said that 8-inch silicon-based GaN LEDs have achieved optimal performance in close cooperation with Toshiba and Puri Optoelectronics.
In addition, mainland China manufacturer Jingneng Optoelectronics (Jiangxi) Co., Ltd. has also mass-produced silicon-based GaN LED chips with an operating current of 350 mAh and luminous efficiency of 120 lumens per watt, mainly for indoor and outdoor and portable lighting applications. More than 20 customers have begun to introduce designs, and the company will introduce 8-inch wafers into 8-inch wafers this year. It is also reported that OSRAM Opto Semiconductors, Philips Lighting, and South Korea's Samsung Group have been actively involved in the development and production of silicon-based GaN LEDs.
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