Deep ultraviolet LED medical care will become the focus of industry development

Deep ultraviolet light refers to light waves between 100 nm and 280 nm. It has great application value in the fields of sterilization, medical treatment, biochemical detection, high-density information storage and secure communication. Compared with mercury light source, deep ultraviolet light-emitting diodes (LEDs) based on aluminum gallium nitride (AlGaN) materials have the advantages of strongness, energy saving, long life, and mercury-free environmental protection, and are gradually infiltrating into the traditional application fields of mercury lamps. At the same time, the unique advantages of deep-UV LEDs have inspired many new consumer electronics applications, such as white goods disinfection modules, portable water purification systems, mobile phone sterilizers, etc., thus showing a broad market prospect, becoming the semiconductor lighting LED After that, new hot spots in global LED research and investment.
The research report shows that the future LED market may be divided into two parts, one is visible light LED for general illumination, and the other is deep ultraviolet LED featuring high-tech innovation. Compared with visible light LED, the current deep ultraviolet LED Luminous efficiency and light output power are generally low. Zhang Yun, a researcher at the Institute of Semiconductors of the Chinese Academy of Sciences, believes that it is necessary to fundamentally improve the two performance bottlenecks of aluminum nitride-based deep ultraviolet LEDs with low luminous efficiency and low light output power. The key points are to study how to break through the core dislocation of low dislocation density AlN and AlGaN materials. And doping technology, design LED device structure with high quantum efficiency and high light extraction efficiency, and develop high reliability chip preparation process and bead packaging technology.
As an important R&D institution for domestic aluminum gallium nitride-based deep ultraviolet LEDs, the Semiconductor Lighting Research and Development Center of the Institute of Semiconductors of the Chinese Academy of Sciences, supported by the National 863 Program, epitaxial growth and doping of aluminum gallium nitride materials and deep ultraviolet LED chips The company has accumulated many years of research and development experience in the preparation process, and has successfully realized the deep ultraviolet LED chip series with emission wavelengths from 260 nm to 300 nm, and has already possessed industrialized batch production capacity.
Researchers published a paper in Applied Physics Letters, pointing out that nano-patterned substrates made using nanosphere technology not only improve the material quality, but also improve the light extraction efficiency. The 280 nm deep-UV LED has an optical output power of more than 3 mW at 20 mA, and the external quantum efficiency and optical output power are nearly double that of conventional planar substrates. They also optimized the packaging process to achieve a packaged deep UV LED bead with an optical output power of more than 4 milliwatts. In 2013, the deep-UV LED key materials and device preparation technology of the Institute of Semiconductors of the Chinese Academy of Sciences were identified as domestic leading and internationally advanced.

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